学术报告:Topological Phases in Transition Metal Chalcogenides

发布时间:2019-08-05阅读次数:

题 目:Topological Phases in Transition Metal Chalcogenides
报告人:刘军伟
时 间:2019年8月6日 14:45
地 点:常熟理工学院东南校区求真楼T1-520室


报告摘要:The discovery of quantum spin Hall effect engendered a new chapter of topological materials research in condensed matter physics and materials science. In this talk, I will introduce some of our recent theoretical works about the topological phases in 2D and 3D transition metal chalcogenides. Based on first-principles calculations, we predict monolayer MX2 (M=Mo, W; X=S, Se, Te) of 1T’ structure could exhibit quantum spin Hall effect. Moreover, their topology can be easily tuned by external electric field, which motivated us to propose a new type of transistor, called topological field transistor. More recently, we found another new class of transition metal chalcogenides MM’Te4 (M=Nb, Ta; M’=Ir, Rh) could be quantum spin Hall insulators in 2D and Weyl semimetals in 3D. I will also discuss some recent transport, ARPES and STM experiments on monolayer WTe2, where many of the observations are consistent with monolayer WTe2 being a 2D TI.

Keywords: WTe2, quantum spin Hall insulator, transition metal chalcogenides

References:

[1] X. Qian, J. Liu, L. Fu, J. LiScience 346, 1344 (2014)

[2] J. Liu, H. Wang, C. Fang, L. Fu, X. Qian, Nano Lett. 17 467-475 (2017)


报告人简介:
刘军伟,教授,2014年博士毕业于清华大学物理系,之后在麻省理工学院做博士后研究。2017年加入香港科技大学任助理教授。他的研究兴趣十分广泛,主要集中在以下几个方面:1)包括拓扑绝缘体,量子反常霍尔效应,拓扑晶体绝缘体和拓扑半金属在内的拓扑材料计算和预测;2)强关联系统的量子蒙特卡洛模拟;3)原子级厚度的铁电材料已经有相应的物理应用;4)二维量子材料和现象。迄今为止,已经在高水平杂志上发表多篇文章,包括2篇Science,2篇Nature Materials, 1篇Nature Physics, 2篇Nature Communications, 2篇Nano Letters 和1篇Physical Review Letters。总SCI被引次数2400+, H因子20。